Datasheet Details
| Part number | 4435BZ |
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| Manufacturer | Fairchild (now onsemi) |
| File Size | 372.15 KB |
| Description | FDS4435BZ |
| Datasheet | 4435BZ_FairchildSemiconductor.pdf |
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Overview: FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.
| Part number | 4435BZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 372.15 KB |
| Description | FDS4435BZ |
| Datasheet | 4435BZ_FairchildSemiconductor.pdf |
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This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TA = 25°C TA = 25°C (Note 1a) (Note 1b) (Note 4) TA = 25°C (Note 1a) Ratings -30 ±25 -8.8 -50 2.5 1.0 24 -55 to +150 Units V V A W mJ °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 25 50 °C/W Package Marking and Ordering Information Device Marking FDS4435BZ Device FDS4435BZ Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500units ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 1 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Volta
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| Part Number | Description |
|---|---|
| 4435 | P-Channel MOSFET |