4435BZ - FDS4435BZ

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	4435BZ
Manufacturer	Fairchild Semiconductor
File Size	372.15 KB
Description	FDS4435BZ
Datasheet	4435BZ Datasheet
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Product details

Description

This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate

Features

Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A.
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A.
Extended VGSS range (-25V) for battery.

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Published: Feb 18, 2010 |