4435BZ Datasheet | Fairchild Semiconductor

FDS4435BZ P-Channel Power Trench® MOSFET .. June 2007 FDS4435BZ P-Channel Power Trench® MOSFET -30V, -8.8A, 20mΩ Features - Max r DS(on) = 20mΩ at VGS = -10V, ID = -8.8A - Max r DS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A - Extended VGSS range (-25V) for battery applications - HBM ESD protection level of ±3.8KV typical (note 3) - High performance trench technology for extremely low r DS(on) - High power and current handling capability - Termination is Lead-free and Ro HS pliant General Description This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TA = 25°C TA = 25°C (Note 1a) (Note 1b) (Note 4) TA = 25°C (Note 1a) Ratings -30 ±25 -8.8 -50 2.5 1.0 24 -55 to +150 Units V V A W m J °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 25 50 °C/W Package Marking and Ordering Information Device Marking FDS4435BZ Device FDS4435BZ Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500units ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C .fairchildsemi. FDS4435BZ P-Channel Power Trench®...