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4435BZ Datasheet Fds4435bz

Manufacturer: Fairchild (now onsemi)

Overview: FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.

General Description

This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TA = 25°C TA = 25°C (Note 1a) (Note 1b) (Note 4) TA = 25°C (Note 1a) Ratings -30 ±25 -8.8 -50 2.5 1.0 24 -55 to +150 Units V V A W mJ °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 25 50 °C/W Package Marking and Ordering Information Device Marking FDS4435BZ Device FDS4435BZ Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500units ©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C 1 www.fairchildsemi.com FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Volta

Key Features

  • Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A.
  • Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A.
  • Extended VGSS range (-25V) for battery.

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